dm p3026sfde document number: d s38679 rev. 1 - 2 1 of 6 www.diodes.com august 2016 ? diodes incorporated d mp3026sfde new product advance information advanced information p - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c - 3 0v 1 9 m ? @ v gs = - 10 v - 8.7 a 4 5 m ? @ v gs = - 4.5 v - 5.5 a description and applications this mosfet is designed to minimize the on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. ? battery m anage ment a pplication ? power m anagement f unctions ? dc - dc converters features and benefits ? 0.6mm profile C ideal for low profile applications ? low gate threshold voltage ? low on - resistance ? esd protected gate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - dfn2020 - 6 (type e) ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 00 7 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm p 3026s fde - 7 u - dfn2020 - 6 (type e) 3 , 000 /tape & reel dmp3026sfde - 13 u - dfn2020 - 6 (type e) 10,000 /tape & reel notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, < 900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information date code key year 201 6 201 7 201 8 201 9 20 20 20 21 20 22 2023 code d e f g h i j k month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d 7p = product type marking code ym = date code marking y = year (ex: d = 201 6 ) m = month (ex: 9 = september) u - dfn 2020 - 6 (type e) equivalent circuit pin1 bottom view top view pin out bottom view 7p y m d s g g ate protection diode esd protected d d d d 1 2 6 5 s s g 3 4 e4
dm p3026sfde document number: d s38679 rev. 1 - 2 2 of 6 www.diodes.com august 2016 ? diodes incorporated d mp3026sfde new product advance information advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 3 0 v gate - source voltage v gss 25 v continuous drain current (note 6 ) v gs = - 10 v steady state t a = +25c t a = +70c i d - 8.7 - 6.9 a t<10s t a = +25c t a = +70c i d - 1 0.4 - 8. 4 a pulsed drain curren t ( 10 dm - 50 a continuous source - drain diode current (note 6 ) t a = +25c i s - 2.0 a avalanche current (note 7) l = 0.1mh i a s - 23 a avalanche energy (note 7) l = 0.1mh e a s 27 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 0. 7 2 w t a = + 70c 0.4 6 thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 1 7 5 c/w t< 10 s 12 1 total power dissipation (note 6 ) t a = + 25c p d 2.0 w t a = + 70c 1. 3 thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 6 1 c/w t<10s 4 2 thermal resistance, junction to case (note 6 ) s teady state r ? j c 9.3 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 3 0 gs = 0v, i d = - 250 a j = + 25c i dss ds = - 2 4 v, vgs = 0v zero gate voltage drain current t j = + 1 5 0 c (note 9) gss gs = 25 v, vds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1 ds = v gs , i d = - 250 a ds (on) ? gs = - 10 v, i d = - 4.5 a 2 8 45 v gs = - 4 .5v, i d = - 3.5 a 3 4 54 v gs = - 4 . 0 v, i d = - 3.0 a diode forward voltage v sd gs = 0v, i s = - 1.0 a dynamic characteristic s (note 9 ) input capacitance c iss ds = - 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 10 v ) q g ds = - 15 v, i d = - 9.5 a total gate charge ( v gs = - 4.5 v ) q g gs gd d(on) ds = - 15 v, v g s = - 10 v, r g = 6 d = - 9.5 a turn - on rise time t r d(off) f rr f = - 9.5 a, di/dt = 1 00a/ rr notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate . 7 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm p3026sfde document number: d s38679 rev. 1 - 2 3 of 6 www.diodes.com august 2016 ? diodes incorporated d mp3026sfde new product advance information advanced information figure1 typical output characteristic 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain-source voltage(v) ds i , d r a i n c u r r e n t ( a ) d v = -4.5v gs v = -5.0v gs v = -10.0v gs v = -4.0v gs v = -3.5v gs v = -3.0v gs v = -2.5v gs figure 2 typical transfer characteristic 0 5 10 15 20 25 30 0 1 2 3 4 5 6 v , gate-source voltage (v) gs i , d r a i n c u r r e n t ( a ) d v = -5.0v ds t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? 0 0.02 0.04 0.06 0.08 0.1 0 5 10 15 20 25 30 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage v = -4.0v gs v = -4.5v gs v = -10.0v gs 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage i = -4.5a d i = -3.5a d 0 0.005 0.01 0.015 0.02 0.025 0.03 0 5 10 15 20 25 30 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain source current (a) d figure 5 typical on-resistance vs. drain current and temperature v = -10v gs t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature v = -4.5v gs i = -3.5a d v = -10v gs i = -4.5a d
dm p3026sfde document number: d s38679 rev. 1 - 2 4 of 6 www.diodes.com august 2016 ? diodes incorporated d mp3026sfde new product advance information advanced information 0 0.01 0.02 0.03 0.04 0.05 0.06 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature v = -10v gs i = -4.5a d v = -4.5v gs i = -3.5a d 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction temperature (c) j figure 8 gate threshold variation vs. junction temperature i = 1ma d i = 250a d 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current t = -55 c j ? t = 25 c j ? t = 85 c j ? t = 125 c j ? t = 150 c j ? 10 100 1000 10000 0 5 10 15 20 25 30 c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance c iss c oss c rss f=1mhz v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 v = -15v ds i = -9.5a d 0.01 0.1 1 10 100 0.1 1 10 100 r ds(on) limited i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j(ma x) t = 25c a v = -10v gs single pulse dut on 1 * mrp board
dm p3026sfde document number: d s38679 rev. 1 - 2 5 of 6 www.diodes.com august 2016 ? diodes incorporated d mp3026sfde new product advance information advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type e) u - dfn2020 - 6 type e dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 ? ? ? ? 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 e 1.95 2.05 2.00 e2 1.40 1.60 1.50 e ? ? ? ? 0.65 l 0.25 0.35 0.30 l1 0.82 0.92 0.87 k1 ? ? ? ? 0.305 k2 ? ? ? ? 0.225 z ? ? ? ? 0.20 all dimensions in mm 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance r (t) = r(t) * r ? ? ja ja r = 171c/w ? ja duty cycle, d = t1/ t2 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d d2 e e b(6x) l(2x) e2 a a3 a1 z(4x) b1 l1 k1 k2
dm p3026sfde document number: d s38679 rev. 1 - 2 6 of 6 www.diodes.com august 2016 ? diodes incorporated d mp3026sfde new product advance information advanced information suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. u - dfn2020 - 6 (type e) dimensions value (in mm) c 0.650 x 0.400 x1 0.285 x2 1.050 y 0.500 y1 0.920 y2 1.600 y3 2.300 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated doe s not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnif y and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this docum ent is written in english but may be translated into multiple languages for reference. only the english version of this docum ent is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. cu stomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requiremen ts concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com x(6x) c x2 y1 y2 y (2x) x1 y3
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